功率器件参数测试_产品库_建材之家 JC68.COM®

随着技术发展，第三代半导体功率器件开始由实验室阶段步入商业应用，未来应用潜力巨大，这些新型器件测试要求更高的电压和功率水平，更快的开关时间。

根据标准、试验条件及被测样品量确定

MOSFET、IGBT、DIODE、BJT，第三代半导体器件等分立器件，以及上述元件构成的功率模块

静态参数	符号
Drain to Source Breakdown Voltage	BVDSS
Drain Leakage Current	IDSS
Gate Leakage Current	IGSS
Gate Threshold Voltage	VGS(th)
Drain to Source On Resistance	RDS(on)
Drain to Source On Voltage	VDS(on)
Body Diode Forward Voltage	VSD
Internal Gate Resistance	Rg
Input capacitance	Cies
Output capacitance	Coes
Reverse transfer capacitance	Cres
Transconductance	gfs
Gate to Source Plateau Voltage	Vgs(pl)
动态参数	符号
Turn-on delay time	td(on)
Rise time	tr
Turn-off delay time	td(off)
Fall time	tf
Turn-on energy	Eon
Turn-off energy	Eoff
Diode reverse recovery time	trr
Diode reverse recovery charge	Qrr
Diode peak reverse recovery current	Irrm
Diode peak rate of fall of reverse recovery current	dirr/dt
Total gate charge	QG
Gate-Emitter charge	QGC
Gate-Collector charge	QGE
其他参数	符号
thermal resistance	Rth
Unclamped Inductive Switching	UIS
Reverse biased safe operating area	RBSOA
Short circuit safe operation area	SCSOA